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Proceedings Paper

Comparative study of electroluminescence efficiency of blue (In,Ga)N and red GaAs quantum-well diodes
Author(s): T. Inada; H. Jimi; K. Fujiwara
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Paper Abstract

Electroluminescence (EL) efficiency of a bright blue (In,Ga)N quantum-well (QW) diode has been studied in comparison with a high quality GaAs QW diode over a wide temperature range and as a function of current. For the red diode the EL intensity increases in directly proportional to the current at 20 K, indicating a nearly unity external quantum efficiency, although the EL efficiency is influenced by the transport of electrically injected carriers and nonradiative processes at higher temperatures. For the blue diode, however, the room temperature EL efficiency is surprisingly high, although the low-temperature EL efficiency is found to be quite low at high injection and significantly varied with current. These variations of the EL efficiency with current and temperature for the blue diode are attributed to the carrier capture and escape processes influenced under the internal piezo-field effects as a function of forward bias voltage.

Paper Details

Date Published: 15 February 2008
PDF: 10 pages
Proc. SPIE 6894, Gallium Nitride Materials and Devices III, 68941T (15 February 2008); doi: 10.1117/12.758989
Show Author Affiliations
T. Inada, Kyushu Institute of Technology (Japan)
H. Jimi, Kyushu Institute of Technology (Japan)
K. Fujiwara, Kyushu Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 6894:
Gallium Nitride Materials and Devices III
Hadis Morkoç; Cole W. Litton; Jen-Inn Chyi; Yasushi Nanishi; Euijoon Yoon, Editor(s)

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