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Proceedings Paper

Novel photonic crystal structure GaN-based light-emitting diodes
Author(s): HaiYang Hu; Lin Lu; Wei Du; HongWei Liu; Qiang Kan; ChunXia Wang; XingSheng Xu; HongDa Chen
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Paper Abstract

For enhancing the output efficiency of GaN light-emitting diode(LED), we calculated the band structure of photonic crystal(PhC), and designed and fabricated several novel GaN LEDs with photonic crystal on Indium-Tin-Oxide(ITO), which as p-type transparent contact of GaN LED. In this fabricating process, we developed conventional techniques in order that these methods can be easily applied to industrial volume-production. And we have done some preliminary experiments and obtained some results.

Paper Details

Date Published: 4 January 2008
PDF: 4 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410J (4 January 2008); doi: 10.1117/12.758788
Show Author Affiliations
HaiYang Hu, Institute of Semiconductors (China)
Lin Lu, Institute of Semiconductors (China)
Wei Du, Institute of Semiconductors (China)
HongWei Liu, Institute of Semiconductors (China)
Qiang Kan, Institute of Semiconductors (China)
ChunXia Wang, Institute of Semiconductors (China)
XingSheng Xu, Institute of Semiconductors (China)
HongDa Chen, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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