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Proceedings Paper

Point defect engineered Si sub-bandgap light-emitting diodes
Author(s): Jiming Bao; Supakit Charnvanichborikarn; Yu Yang; Malek Tabbal; Byungha Shin; Jennifer Wong-Leung; James S. Williams; Michael J. Aziz; Federico Capasso
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Paper Abstract

We present a novel approach to enhance light emission in Si and demonstrate sub-bandgap light-emitting diodes (LED) based on the introduction of point defects. Ion implantation, pulsed laser melting and rapid thermal annealing were used to create LEDs containing self-interstitial-rich optically active regions. Procedures to fabricate LEDs on a bulk silicon substrate and on a silicon-on-insulator (SOI) wafer will be presented, and methods to improve device performances will be discussed. The control and utilization of point defects represents a new approach toward creating Si in a stable, optically active form for Si-based optoelectronics.

Paper Details

Date Published: 9 January 2008
PDF: 8 pages
Proc. SPIE 6800, Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV, 68000T (9 January 2008); doi: 10.1117/12.758543
Show Author Affiliations
Jiming Bao, Harvard Univ. (United States)
Supakit Charnvanichborikarn, The Australian National Univ. (Australia)
Yu Yang, Harvard Univ. (United States)
Yunnan Univ. (China)
Malek Tabbal, Harvard Univ. (United States)
American Univ. of Beirut (Lebanon)
Byungha Shin, Harvard Univ. (United States)
Jennifer Wong-Leung, The Australian National Univ. (Australia)
James S. Williams, The Australian National Univ. (Australia)
Michael J. Aziz, Harvard Univ. (United States)
Federico Capasso, Harvard Univ. (United States)

Published in SPIE Proceedings Vol. 6800:
Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV
Hark Hoe Tan; Jung-Chih Chiao; Lorenzo Faraone; Chennupati Jagadish; Jim Williams; Alan R. Wilson, Editor(s)

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