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Proceedings Paper

Investigation on time-resolved photoluminescence of InGaN single quantum well structure grown by metalorganic chemical vapor deposition
Author(s): Jinshe Yuan; Mingyue Wang; Guohao Yu
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Paper Abstract

The time-resolved photoluminescence spectra were investigated on the basis of transmission, reflection and photoluminescence studies of the InGaN single quantum well structure grown by metalorganic chemical vapor deposition. It was found that the temporal responses of photoluminescence decay exhibited exponential function. The multi-peak structure of the photoluminescence spectra was attributed to the Fabry-Perot interference effect in the GaN/InGaN/GaN vertical cavity.

Paper Details

Date Published: 4 January 2008
PDF: 4 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411M (4 January 2008); doi: 10.1117/12.757818
Show Author Affiliations
Jinshe Yuan, Chongqing Normal Univ. (China)
Mingyue Wang, Chongqing Normal Univ. (China)
Guohao Yu, Chongqing Normal Univ. (China)


Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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