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Proceedings Paper

Analysis of thermal stress damage in single-crystal silicon induced by 1064-nm long-pulse laser
Author(s): Yanbei Chen; Jian Lu; Xiaowu Ni
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Paper Abstract

Single-crystal silicon is an excellent infrared window material and is often used as light filter, infrared window and substrate material in an optical system. At the same time single-crystal silicon is typical brittle material. Therefore thermal stress damage has possibly occurred before melting when it is irradiated by laser. In order to investigate on the laser-induced thermal stress damage problem in single-crystal silicon, a spatial axisymmetric finite element model is established to solve the thermal stress problem which a single-crystal silicon substrate is heated by a Nd:YAG laser beam with wavelength of 1064nm and pulse width of the millisecond order. After the temperature and stress fields are obtained, the relevant analysis is carried out. The calculational results are in reasonable agreement with the reported experiment results. It found that the stress value in the central zone of the laser spot exceeds the fracture strength of single-crystal silicon, which can explain the damage of cleavage fracture of the material.

Paper Details

Date Published: 8 January 2008
PDF: 7 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351X (8 January 2008); doi: 10.1117/12.757773
Show Author Affiliations
Yanbei Chen, Nanjing Univ. of Science and Technology (China)
Jian Lu, Nanjing Univ. of Science and Technology (China)
Xiaowu Ni, Nanjing Univ. of Science and Technology (China)

Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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