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Proceedings Paper

Analysis of property of HSQ in electron beam lithography
Author(s): Min Zhao; XiaoLi Zhu; Baoqin Chen; Jiebin Niu; Ming Liu; Changqing Xie
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Paper Abstract

Hydrogen silsesquioxane (HSQ) is a kind of inorganic negative-tone resist for electron beam lithography with high pattern resolution of about 5 nm. It is a kind of promising resist used in fabrication of nanostructures such as transmission grating (TG), dots array, and chiral structures. But the poor sensitivity limits the extensive application of HSQ. And the property of HSQ in electron beam lithography is also studied little before. In this paper, from the viewpoint of chemical structure the property of HSQ in electron beam lithography has been proposed and experiments have also been presented with the variety of the exposure dose and development conditions. It is proved by experiments not only the sensitivity and contrast of HSQ but also the influence of proximity effect can be modulated by changing the baking temperature and concentration of developer with the same exposure conditions. 100 nm lines at 200 nm pitch grating patterns with excellent vertical side-wall and line-edge roughness have been achieved in more than 450 nm thickness HSQ layer by increasing the concentration of developer and reducing the baking temperature in combination with optimization of exposure conditions.

Paper Details

Date Published: 21 November 2007
PDF: 6 pages
Proc. SPIE 6827, Quantum Optics, Optical Data Storage, and Advanced Microlithography, 682728 (21 November 2007); doi: 10.1117/12.757739
Show Author Affiliations
Min Zhao, Institute of Microelectronics (China)
XiaoLi Zhu, Institute of Microelectronics (China)
Baoqin Chen, Institute of Microelectronics (China)
Jiebin Niu, Institute of Microelectronics (China)
Ming Liu, Institute of Microelectronics (China)
Changqing Xie, Institute of Microelectronics (China)


Published in SPIE Proceedings Vol. 6827:
Quantum Optics, Optical Data Storage, and Advanced Microlithography
Chris A. Mack; Jinfeng Kang; Jun-en Yao; Guangcan Guo; Song-hao Liu; Osamu Hirota; Guofan Jin; Kees A. Schouhamer Immink; Keiji Shono, Editor(s)

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