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Proceedings Paper

Progress in cooled IR detectors and new developments
Author(s): Philippe Tribolet; Michel Vuillermet
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Paper Abstract

Cooled IR detectors are produced at mass production level at Sofradir for years based on its mature and proven HgCdTe technology. However, following the market needs, a lot of progress have been made and allow Sofradir to offer new product designs mainly dealing with the simplification of the detector use as well as reliability improvements. In addition to the conventional technologies used at mass production level, the Molecular Beam Epitaxy (MBE) approach has been under investigation for several years to prepare both the very large array fabrication and the new (3rd) generation developments. CEA-Leti, in cooperation with Sofradir, obtained very good results on 4-inches wafer size which confirms the mastering of this growth process. Very high qualities FPAs (1280×1024), with pitches as small as 15μm, were demonstrated as well as bicolor and dual band FPAs which use more complex multi hetero-junctions architectures. A very new development at CEA-Leti concerns avalanche photodiodes (APD) made with HgCdTe which presents a unique feature among all the over semiconductors: extremely high avalanche gains can be obtained on n on p photodiodes without absolutely any noise excess. These results open new interesting fields of investigation for low flux applications and fast detectors. The cooled IR detector field is progressing very rapidly and new developments will offer a lot of system simplification and enhancements.

Paper Details

Date Published: 24 January 2008
PDF: 12 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350N (24 January 2008); doi: 10.1117/12.757703
Show Author Affiliations
Philippe Tribolet, Sofradir (France)
Michel Vuillermet, Sofradir (France)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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