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Proceedings Paper

Defect states of hydrogenated nanocrystalline silicon studied by surface photovoltage spectroscopy
Author(s): Chunsheng Wang; Jinchuan Zhang; Wei Yu; Liping Wu; Wenge Ding; Guangsheng Fu
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Paper Abstract

Surface photovoltage spectroscopy (SPS) is used to determine the defect states of the nc-Si:H films which are prepared by using helicon wave plasma-enhanced chemical vapor deposition technique(HWP-CVD) under different substrate temperature. The films exhibit a 3-phase model, which suggests that nc-Si:H consists of crystalline grains surrounded by grain boundaries and embedded in an amorphous matrix. SPS measurement indicated that the nc-Si:H films have additional two types of additional defect states besides the occupied Si dangling bond states D0/Di and the empty Si dangling states D+ in a-Si, which is attributed to the interface defect states between the nanocrystalline Si grains and the amorphous matrix. The relative SPS intensity of these two kinds of defect states in samples increases with the temperature, which may be interpreted as a result of the bonded hydrogen release at the surface of nanocrystalline Si grains and in the amorphou matrix while increasing substrate temperature.

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68411X (4 January 2008); doi: 10.1117/12.757676
Show Author Affiliations
Chunsheng Wang, Hebei Univ. (China)
Jinchuan Zhang, Hebei Univ. (China)
Wei Yu, Hebei Univ. (China)
Liping Wu, Hebei Univ. (China)
Wenge Ding, Hebei Univ. (China)
Guangsheng Fu, Hebei Univ. (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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