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Proceedings Paper

Simulation of thermal stress in n-type diamond thin films prepared by CVD
Author(s): Yongjie Wang; Qingxun Zhao; Zhanlong Zhao
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Paper Abstract

Due to thermal mismatch, stresses develop in n-type diamond thin films when cooled down to room temperature from deposition temperature. In this investigation, thermal stresses in diamond films deposited on silicon substrate are calculated, the influence of temperature and film thickness on thermal stresses are also discussed. The results show that thermal stresses are sensitive to deposition parameters, the thermal stresses increase with the increase of deposition temperature, reach the maximum value of 0.724GPa at 1000k, and then begin to decrease. With the increase of diamond thickness and substrate thickness, the thermal stresses decrease and increase respectively.

Paper Details

Date Published: 4 January 2008
PDF: 4 pages
Proc. SPIE 6825, Lasers in Material Processing and Manufacturing III, 68251A (4 January 2008); doi: 10.1117/12.757610
Show Author Affiliations
Yongjie Wang, North China Electric Power Univ. (China)
Qingxun Zhao, Hebei Univ. (China)
Zhanlong Zhao, North China Electric Power Univ. (China)


Published in SPIE Proceedings Vol. 6825:
Lasers in Material Processing and Manufacturing III
ShuShen Deng; Akira Matsunawa; Xiao Zhu, Editor(s)

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