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Proceedings Paper

Hydrogen sensors based on Pt-AlGaN/AIN/GaN Schottky diode
Author(s): Xinhua Wang; Xiaoliang Wang; Hongling Xiao; Chun Feng; Baozhu Wang; Cuibai Yang; Junxi Wang; Cuimei Wang; Jungxue Ran; Guoxin Hu; Jinmin Li
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Paper Abstract

Pt/AlGaN/AlN/GaN Schottky diodes have been fabricated and characterized for H2 sensing. Platinum (Pt) with a thickness of 20nm was evaporated on the sample to form the Schottky contact. The ohmic contact, formed by evaporated Ti/Al/Ni/Au metals, was subsequently annealed by a rapid thermal treatment at 860°C for 30 s in N2 ambience. Both the forward and reverse current of the device increased greatly when exposed to H2 gas. The sensor's responses under different hydrogen concentrations from 500ppm to 10% H2 in N2 at 300K were investigated. A shift of 0.45V at 297K is obtained at a fixed forward current for switching from N2 to 10% H2 in N2. Time response of the sensor at a fixed bias of 0.5 V was also measured. The turn-on response of the device was rapid, while the recovery of the sensor at N2 atmosphere was rather slow. But it recovered quickly when the device was exposed to the air. The decrease in the barrier height of the diode was calculated to be about 160meV upon introduction of 10% H2 into the ambient. The sensitivity of the sensor is also calculated. Some thermodynamics analyses have been done according to the Langmuir isotherm equation.

Paper Details

Date Published: 29 January 2008
PDF: 8 pages
Proc. SPIE 6829, Advanced Materials and Devices for Sensing and Imaging III, 68291R (29 January 2008); doi: 10.1117/12.757446
Show Author Affiliations
Xinhua Wang, Institute of Semiconductors (China)
Xiaoliang Wang, Institute of Semiconductors (China)
Key Lab. of Semiconductor Materials Science (China)
Hongling Xiao, Institute of Semiconductors (China)
Chun Feng, Institute of Semiconductors (China)
Baozhu Wang, Institute of Semiconductors (China)
Cuibai Yang, Institute of Semiconductors (China)
Junxi Wang, Institute of Semiconductors (China)
Cuimei Wang, Institute of Semiconductors (China)
Jungxue Ran, Institute of Semiconductors (China)
Guoxin Hu, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6829:
Advanced Materials and Devices for Sensing and Imaging III
Anbo Wang; Yimo Zhang; Yukihiro Ishii, Editor(s)

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