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Proceedings Paper

The formation and elimination of inclusions in CdZnTe crystal
Author(s): Congfeng Liu
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Paper Abstract

Cadmium zinc telluride(CdZnTe) crystals are widely used in the fabrication of γ-ray detectors and IR focal plane arrays(IRFPA). But the existence of the inclusion defects in the materials have limited performances and yield of the detectors for quite long time. So it is very important and emergent to study the characteristic of the inclusion in CdZnTe crystal and how to suppress them. In this paper, the distribution characteristic of inclusion densities in the CdZnTe Crystal were described by the IR-transmission microscope technique. And the sizes and densities of the inclusions were found to be relative with the melt stoichiometry and cooling process of the growth. It was also found that the post-annealing of CdZnTe samples can eliminate the inclusions by the element complementarity under the action of thermal drive. In order to investigate the origin of the inclusions, a quick cooling growth experiment was completed by quenching the ampoule into the water. The result showed that there isn't any inclusion in the region of the material where the material grows in very fast growth rate. But the transmissivity of the material has an obvious decrease in long wave band. This means that a great deal of point defects generate instead of the form of the inclusions. The mechanism to form the inclusions has been analyzed based on the above mentioned phenomena and the phase diagram of CdZnTe. Then it can be indicated that the controls of the melt stoichiometry and cooling process of the growth are the two main factors to eliminate the inclusions of CdZnTe materials.

Paper Details

Date Published: 8 January 2008
PDF: 8 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350I (8 January 2008); doi: 10.1117/12.757404
Show Author Affiliations
Congfeng Liu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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