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Proceedings Paper

Surface defects induced by impurities in MBE-grown HgCdTe
Author(s): Xiangliang Fu; Weiqiang Wang; Qingzhu Wei; Jun Wu; Lu Chen; Yan Wu; Li He
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Paper Abstract

Surface defects of molecular beam epitaxially grown HgCdTe are the major concern in developing large format infrared focal plane arrays. Voids were usually observed on the HgCdTe surfaces as previously reported, they were originated either from the improper substrates preparation or from the growth condition. However, the defects formation with impurities has not been addressed. This paper presents our recent observation on defects induced by the impurities involved in the mercury beam fluxes. These defects can be craters or bumps, having a spatially clustering feature. To identify the origin of these kinds of defects, experiments were performed on HgCdTe as well as CdTe with mercury flux, and the defects were observed and analyzed by using SEM and EDAX. The result, for the first time, confirmed that impurities in the mercury beam were responsible to the formation of surface defects.

Paper Details

Date Published: 17 January 2008
PDF: 8 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351U (17 January 2008); doi: 10.1117/12.757156
Show Author Affiliations
Xiangliang Fu, Shanghai Institute of Technical Physics (China)
Chinese Academy of Sciences (China)
Weiqiang Wang, Shanghai Institute of Technical Physics (China)
Qingzhu Wei, Shanghai Institute of Technical Physics (China)
Chinese Academy of Sciences (China)
Jun Wu, Shanghai Institute of Technical Physics (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Yan Wu, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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