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Proceedings Paper

Characterization of multilayered HgCdTe for MW/LW two-color application
Author(s): Qingzhu Wei; Wenhong Zhou; Weiqiang Wang; Xiangliang Fu; Meifang Yu; Lu Chen; Yan Wu; Li He
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Paper Abstract

Dual color detection is a major concept of the third generation infrared focal plane arrays sensors (FPAs) for increasing the demand of target identification. The performance of these detectors are largely relied on the growth capability of HgCdTe multilayered structure. This paper presents our preliminary results on growth of MW/LW two-color structure by using molecular beam epitaxy. The detector had NPpn architecture, with indium doped n-type bottom (window) layer and Hg-vacancy doped MW and LW p-type layers. The top n-type layer was ion implanted by using B+. The compositions (mole fraction x) of each layers and its gradient at the interfaces were measured by infrared transmission, SIMS and SEM. The In doping layer was analyzed by SIMS. The electrical properties of In doping layer were measured by Hall effects measurements. It was found that the structure obtained agreed well with the growth design. MW/LW two color detectors of a 64×64 format were fabricated by mesa delineation, and the optimum structure was also discussed.

Paper Details

Date Published: 8 January 2008
PDF: 8 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351T (8 January 2008); doi: 10.1117/12.757145
Show Author Affiliations
Qingzhu Wei, Shanghai Institute of Technical Physics (China)
Graduate University of Chinese Academy of Sciences (China)
Wenhong Zhou, Shanghai Institute of Technical Physics (China)
Graduate University of Chinese Academy of Sciences (China)
Weiqiang Wang, Shanghai Institute of Technical Physics (China)
Xiangliang Fu, Shanghai Institute of Technical Physics (China)
Graduate University of Chinese Academy of Sciences (China)
Meifang Yu, Shanghai Institute of Technical Physics (China)
Lu Chen, Shanghai Institute of Technical Physics (China)
Yan Wu, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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