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Proceedings Paper

High-efficiency AlGaAs/GaAs quantum well semiconductor laser
Author(s): Lin Li; Chunming Wan; Zhanguo Li; Mei Li; Guojun Liu
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Paper Abstract

The AlGaAs/GaAs double quantum well semiconductor lasers grown by molecular beam epitaxy show high external quantum efficiency and high power conversion efficiency at continuous-wave power output using an asymmetric structure. The threshold current density and slope efficiency of the device are 200A/cm2 and 1.25W/A, respectively. The high external quantum efficiency and maximum conversion efficiency are 81% and 66%, respectively.

Paper Details

Date Published: 7 January 2008
PDF: 5 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68241G (7 January 2008); doi: 10.1117/12.757104
Show Author Affiliations
Lin Li, Changchun Univ. of Science and Technology (China)
Chunming Wan, Changchun Univ. of Science and Technology (China)
Zhanguo Li, Changchun Univ. of Science and Technology (China)
Mei Li, Changchun Univ. of Science and Technology (China)
Guojun Liu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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