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Proceedings Paper

A preliminary study on laser-induced damage in InGaAs material and detectors
Author(s): Hongyang Liu; Hengjing Tang; Haimei Gong
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Paper Abstract

We have investigated the laser-induced damage morphology using femtosecond laser pulse at 0.8 μm on InGaAs surface. Damage morphology has been analyzed by a scanning electron microscope (SEM). The diameter of the damage spot increased, on increasing the laser fluence. The damage morphology at the central portion differs from the one at the periphery of the spot. The roughness and the step height of the damage spot were measured through XP Stylus Profiler which is a computerized, high-sensitivity surface profiler. The depth morphology of the damage spot shows the ablation of material. After the laser-induced damage studies of material, laser-induced damage in 256 elements front-illuminated InGaAs detectors arrays are reported. Prior to irradiation, the dark current is dominated by the diffusion current indicating that the junctions are of good quality. The dark current-voltage curves before laser irradiation are compared with the ones irradiated at different laser power density and we find that the laser irradiation may produce an increase in the dark current. The spectral response was also measured to evaluate the laser-induced effects on the detectors.

Paper Details

Date Published: 8 January 2008
PDF: 9 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351S (8 January 2008); doi: 10.1117/12.756878
Show Author Affiliations
Hongyang Liu, Shanghai Institute of Technical Physics (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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