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Proceedings Paper

Structure and optical properties of pulsed-laser-deposited AlN thin films for optoelectronic applications
Author(s): S. Bakalova; A. Szekeres; A. Cziraki; S. Grigorescu; G. Socol; E. Axente; I. N. Mihailescu
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Paper Abstract

The structure and optical properties of AlN thin films synthesized at 800°C by Pulsed Laser Deposition were studied in terms of ambient nitrogen pressure (10-4-10 Pa) and post-deposition cooling rate (5-25°C/min). X-ray diffraction patterns showed the films were polycrystalline with predominantly cubic phase and small-sized crystallites. The refractive index and oscillator energies values were also characteristic of the polycrystalline AlN with cubic structure.

Paper Details

Date Published: 11 September 2007
PDF: 5 pages
Proc. SPIE 6785, ROMOPTO 2006: Eighth Conference on Optics, 67850H (11 September 2007); doi: 10.1117/12.756820
Show Author Affiliations
S. Bakalova, Institute of Solid State Physics (Bulgaria)
A. Szekeres, Institute of Solid State Physics (Bulgaria)
A. Cziraki, Eotvos Lorand Univ. (Hungary)
S. Grigorescu, National Institute for Lasers, Plasma and Radiation Physics (Romania)
G. Socol, National Institute for Lasers, Plasma and Radiation Physics (Romania)
E. Axente, National Institute for Lasers, Plasma and Radiation Physics (Romania)
I. N. Mihailescu, National Institute for Lasers, Plasma and Radiation Physics (Romania)


Published in SPIE Proceedings Vol. 6785:
ROMOPTO 2006: Eighth Conference on Optics

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