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Proceedings Paper

High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate
Author(s): Yang Zhang; Fawang Yan; Haiyong Gao; Jinmin Li; Yiping Zeng; Guohong Wang; Fuhua Yang
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Paper Abstract

Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.

Paper Details

Date Published: 4 January 2008
PDF: 7 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410T (4 January 2008); doi: 10.1117/12.756774
Show Author Affiliations
Yang Zhang, Institute of Semiconductors (China)
Fawang Yan, Institute of Semiconductors (China)
Haiyong Gao, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)
Yiping Zeng, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Fuhua Yang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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