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Proceedings Paper

AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers
Author(s): N. X. Liu; J. C. Yan; Z. Liu; P. Ma; J. X. Wang; J. M. Li
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Paper Abstract

We investigated AlGaN layers grown by metalorganic chemical vapor deposition (MOCVD) on high temperature (HT-)GaN and AlGaN buffer layers. On GaN buffer layer, there are a lot of surface cracking because of tensile strain in subsequent AlGaN epilayers. On HT-AlGaN buffer layer, not only cracks but also high densities rounded pits present, which is related to the high density of coalescence boundaries in HT-AlGaN growth process. The insertion of interlayer (IL) between AlGaN and the GaN pseudosubstrate can not only avoid cracking by modifying the strain status of the epilayer structure, but also improved Al incorporation efficiency and lead to phase-separation. And we also found the growth temperature of IL is a critical parameter for crystalline quality of subsequent AlGaN epilayer. Low temperature (LT-) AlN IL lead to a inferior quality in subsequent AlGaN epilayers.

Paper Details

Date Published: 4 January 2008
PDF: 8 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410S (4 January 2008); doi: 10.1117/12.756715
Show Author Affiliations
N. X. Liu, Institute of Semiconductors (China)
J. C. Yan, Institute of Semiconductors (China)
Z. Liu, Institute of Semiconductors (China)
P. Ma, Institute of Semiconductors (China)
J. X. Wang, Institute of Semiconductors (China)
J. M. Li, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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