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Proceedings Paper

Study on annealed Pt/n-AlxGa1-xN MSM UV photodetectors
Author(s): Xiangfeng Zhang; Weiguo Sun; Zhengxiong Lu; Caijing Cheng; Hongyan Zhao
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Paper Abstract

Platinum was deposited on unintentionally doped n-AlxGa1-xN films grown by metal-organic chemical vapor deposition (MOCVD) to form MSM ultraviolet photodetectors. All devices were annealed for 10 min at different temperature in N2 ambient. Results indicate that the generation of hillocks on the surface of Pt thin-film electrodes at the elevated temperatures due to relieving compressive stress affects the dark current directly. Dark current less than 10pA in the (-10V,10V) range was obtained from a device after annealing at 900°C. Both detectors show sharp spectral responsivity cutoff of about three orders of magnitude by 325nm and 315nm respectively.

Paper Details

Date Published: 8 January 2008
PDF: 9 pages
Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68381S (8 January 2008); doi: 10.1117/12.756558
Show Author Affiliations
Xiangfeng Zhang, Luoyang Optoelectronic Institute (China)
Weiguo Sun, Luoyang Optoelectronic Institute (China)
Zhengxiong Lu, Luoyang Optoelectronic Institute (China)
Caijing Cheng, Luoyang Optoelectronic Institute (China)
Hongyan Zhao, Luoyang Optoelectronic Institute (China)

Published in SPIE Proceedings Vol. 6838:
Optoelectronic Devices and Integration II
Xuping Zhang; Hai Ming; Maggie Yihong Chen, Editor(s)

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