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Properties of Au/Pt/Ti contact to p-InP by rapid thermal processing
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Paper Abstract

We found that the contact resistance of Au/Pt/Ti on p-InP increases with the increase of annealing time and annealing temperature. Au/Pt/Ti is ohmic contact metal as deposited with specific contact resistance of 2.49×10-3 Ωcm2 when p-InP doped by 7.5×1018 cm-3 and is Schottky contact when doped by 2×1018 cm-3. Surface morphologies of Au/Pt/Ti after rapid thermal processing (RTP) were analyzed by atom force microscopy (AFM). An interface layer dominated by TiIn compound, which increase the specific contact resistance, was found in Auger electron spectroscopy (AES) analysis. P-InP and n-InP ohmic contacts can be achieved at the same time as deposited when added p-In0.53Ga0.47As layer on p-InP/InGaAs/n-InP without annealing.

Paper Details

Date Published: 8 January 2008
PDF: 10 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350D (8 January 2008); doi: 10.1117/12.756554
Show Author Affiliations
Yanqiu Lv, Luoyang Optoelectronic Institute (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Bing Han, Shanghai Institute of Technical Physics (China)
Xiaoli Wu, Shanghai Institute of Technical Physics (China)
Kefeng Zhang, Shanghai Institute of Technical Physics (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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