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Proceedings Paper

Demonstration and control of the fast-absorption recovery times of the InGaN/GaN quantum well saturable absorbers
Author(s): Fen Lin; Ning Xiang; Peng Chen; Soo Jin Chua; Afshan Irshad; Stefan Roither; Audrius Pugzlys; Andrius Baltuska
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Paper Abstract

InGaN/GaN multiple quantum well samples were grown by metal organic chemical vapor deposition with thinner low-temperature GaN buffers than that in the conventional structure. It was found that the absorption recovery times of the InGaN/GaN quantum wells can be controlled by varying the thickness of the low-temperature GaN buffers. Transmission electron microscopy results showed that increased dislocations were introduced in the quantum well region with decreased low-temperature GaN buffer thickness. The degraded crystalline quality of the absorbing regions caused an increased density of nonradiative recombination centers, which were responsible for the fast recovery of the absorption.

Paper Details

Date Published: 7 January 2008
PDF: 8 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 68240T (7 January 2008); doi: 10.1117/12.756401
Show Author Affiliations
Fen Lin, National Univ. of Singapore (Singapore)
Ning Xiang, National Univ. of Singapore (Singapore)
Peng Chen, Institute of Materials Research and Engineering (Singapore)
Soo Jin Chua, National Univ. of Singapore (Singapore)
Institute of Materials Research and Engineering (Singapore)
Afshan Irshad, Vienna Univ. of Technology (Austria)
Stefan Roither, Vienna Univ. of Technology (Austria)
Audrius Pugzlys, Vienna Univ. of Technology (Austria)
Andrius Baltuska, Vienna Univ. of Technology (Austria)

Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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