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Proceedings Paper

The side-passivation research on LWIR HgCdTe detector
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Paper Abstract

In order to prevent Hg running over from the exposing side of HgCdTe LWIR detector with little photosensitive region, side-passivation detectors are fabricated. Then several experiments are done to characterize the side-passivation effect. Firstly, a SEM micrograph is shown, and it makes clear that wet etching and side-passivation can remove part of defect induced by IBE. Secondly, the performance measurement indicates that the performance of side-passivation detector is superior to the general one, especially for detectors with little photosensitive region. Thirdly, hot dipping is done to say that the thermal stability of side-passivation detectors is superior to general ones. And with the exception of this, the less the photosensitive region width is, the stronger the ability of protection is. Last but not the least, the detectivity of not only general detectors but also side-passivation ones increases obviously. As a whole, the performance of side-passivation detectors increases more largely than general ones. Above all, side-wall passivating film can passivate the sensitivity of detector's surface and block Hg out of the surface effectively. The results can provide experimental reference for IR semiconductor detector.

Paper Details

Date Published: 8 January 2008
PDF: 9 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351M (8 January 2008); doi: 10.1117/12.756336
Show Author Affiliations
Qinfei Xu, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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