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Proceedings Paper

Charge accumulation in composite dielectric layers in capacitive RF MEMS switches
Author(s): Linxian Zhan; Haisheng San; Gang Li; Peng Xu; Xuyuan Chen
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Paper Abstract

In this paper, our work is focusing on investigating the mechanisms of the charge accumulation in dielectric layer of RF MEMS capacitive switches. In our experiments, silicon-nitride and silicon-oxide composite films, e.g., SiO2+Si3N4 and SiO2+Si3N4+SiO2 films are chosen as the dielectric layers for study. The composite films were prepared by thermal oxidation and PECVD process. The Metal-Insulator-Semiconductor (MIS) structure was produced by using the composite films as the dielectric layer. The capacitance versus voltage (C-V) measurement is employed to study the space charge injection and relaxation process in the composite films. The results show that the charge accumulation can be reduced by using the composite films structure.

Paper Details

Date Published: 4 January 2008
PDF: 8 pages
Proc. SPIE 6836, MEMS/MOEMS Technologies and Applications III, 68360Z (4 January 2008); doi: 10.1117/12.756133
Show Author Affiliations
Linxian Zhan, Xiamen Univ. (China)
Haisheng San, Xiamen Univ. (China)
Gang Li, Xiamen Univ. (China)
Peng Xu, Xiamen Univ. (China)
Xuyuan Chen, Xiamen Univ. (China)
Vestfold Univ. College (Norway)

Published in SPIE Proceedings Vol. 6836:
MEMS/MOEMS Technologies and Applications III
Jung-Chih Chiao; Xuyuan Chen; Zhaoying Zhou; Xinxin Li, Editor(s)

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