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Proceedings Paper

Terahertz wave switch using high-resistivity silicon
Author(s): Jiu-sheng Li; Hai-bo Qiu; Ying Zheng; Yuan-yuan Zhuang
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Paper Abstract

In this letter, a new type of optically controllable, terahertz wave switch using high resistivity silicon wafer is developed. A high resistivity silicon is a lossless dielectric material at terahertz wave without optical excitation. When a silicon wafer is optically excited, free carriers are generated, and the silicon wafer becomes a lossy dielectric. We study theoretically and demonstrate experimentally light controllable terahertz wave of the high resistivity silicon wafers. The results show that a more than 15dB attenuation of the novel device is obtained at frequency of 0.3THz. The proposed structure is useful for developing low cost switch in the terahertz wave region.

Paper Details

Date Published: 4 January 2008
PDF: 5 pages
Proc. SPIE 6840, Terahertz Photonics, 68401D (4 January 2008); doi: 10.1117/12.756088
Show Author Affiliations
Jiu-sheng Li, China Jiliang Univ. (China)
Hai-bo Qiu, China Jiliang Univ. (China)
Ying Zheng, China Jiliang Univ. (China)
Yuan-yuan Zhuang, China Jiliang Univ. (China)


Published in SPIE Proceedings Vol. 6840:
Terahertz Photonics
Cunlin Zhang; Xi-Cheng Zhang, Editor(s)

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