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Proceedings Paper

Analysis of the influence of the radius of incident laser beam on the radius of melting area of semiconductor irradiated by long-pulse high-power laser
Author(s): Weihuan Ding; Zhonghua Shen; Jian Lu; Xiaowu Ni
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Paper Abstract

Under the conditions of radius of the incident laser beam is much larger than the thermal diffusivity of the materials, the model has been established with the heat transfer theory and the finite element method. Analyze has been made out on the thermal interaction of long pulse laser and semiconductor Si and Ge. The influence of the radius of incident laser beam on the size of melting area on sample has been considered. The relation between the rate of the max melting radius on fused sample and the radius of incident laser beam Φ'/Φ and the laser fluence has been given out and discussed, which is of importance to the research on the interaction mechanism of the laser beam and semiconductor material.

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6839, Nonlinear Optics: Technologies and Applications, 683919 (4 January 2008); doi: 10.1117/12.755994
Show Author Affiliations
Weihuan Ding, Nanjing Univ. of Science & Technology (China)
Zhonghua Shen, Nanjing Univ. of Science & Technology (China)
Jian Lu, Nanjing Univ. of Science & Technology (China)
Xiaowu Ni, Nanjing Univ. of Science & Technology (China)


Published in SPIE Proceedings Vol. 6839:
Nonlinear Optics: Technologies and Applications
Yiping Cui; Qihuang Gong; Yuen-Ron Shen, Editor(s)

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