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Proceedings Paper

The surface treatment of silicon wafer by microwave down-stream plasma etching
Author(s): Hui Ju; Wenkui Wang
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Paper Abstract

Silicon is one of the most common materials used in optical micro-electro-mechanical systems (MEMS). For the optical applications the surface quality plays a vital role in the performance of elements, so the control of surface morphology, such as surface smoothing, is very important to produce optical MEMS elements with high reliability and high quality. The most commonly used etching methods such as reactive ion etching (RIE) always left damage layer on the etched surface leaving the surface with high roughness. In this paper 2.54GHz micro wave excited plasma was used to treat the silicon surface, and the different etching conditions of CF4 and O2 mixture were investigated. The surface quality after this down-stream plasma treatment was studied by atomic force microscopy (AFM) measurement.

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6831, Nanophotonics, Nanostructure, and Nanometrology II, 683114 (4 January 2008); doi: 10.1117/12.755881
Show Author Affiliations
Hui Ju, Nagoya Univ. (Japan)
Wenkui Wang, The Hong Kong Polytechnic Univ. (Hong Kong China)


Published in SPIE Proceedings Vol. 6831:
Nanophotonics, Nanostructure, and Nanometrology II
Xing Zhu; Stephen Y. Chou; Yasuhiko Arakawa, Editor(s)

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