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Proceedings Paper

Enhanced electron injection in inverted top-emitting OLEDs with n-Si cathode by using Cs2CO3 buffer layer
Author(s): Shu-ming Chen; Yong-bo Yuan; Jia-rong Lian; Ze-feng Xie; X. Zhou
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Paper Abstract

We report a significant enhancement of the electron injection from n-Si bottom cathodes to organics by using a thin layer of Cs2CO3 as electron injection layer, leading to the reduction of the turn-on voltages and the improvement of the efficiencies in Alq3 based inverted top-emitting OLEDs with n-Si directly as cathodes. With structure of n-Si/ Cs2CO3 (2 nm)/TPBi (10 nm)/ Alq3 (40 nm)/ NPB (40 nm)/ MoO3 (2 nm)/Ag (20 nm)/ Alq3 (40 nm), where the 10 nm TPBi is hole blocking layer for improving charge balance in emission zone and the 40 nm Alq3 layer on Ag anode is the capping layer for improving light out-coupling efficiency, the inverted top-emitting OLEDs show a turn on voltage of 6 V and a driving voltage of 10 V for 100 cd/m2 with a maximum efficiency of around 1.5 cd/A, which are superior compared to the relevant results ever reported.

Paper Details

Date Published: 20 November 2007
PDF: 8 pages
Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280O (20 November 2007); doi: 10.1117/12.755840
Show Author Affiliations
Shu-ming Chen, Sun Yat-Sen Univ. (China)
Yong-bo Yuan, Sun Yat-Sen Univ. (China)
Jia-rong Lian, Sun Yat-Sen Univ. (China)
Ze-feng Xie, Sun Yat-Sen Univ. (China)
X. Zhou, Sun Yat-Sen Univ. (China)

Published in SPIE Proceedings Vol. 6828:
Light-Emitting Diode Materials and Devices II
Jian Wang; Changhee Lee; Hezhou Wang, Editor(s)

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