Share Email Print

Proceedings Paper

Improved efficiency in top-emitting OLEDs with p-type Si anode
Author(s): Yong-bo Yuan; Shu-ming Chen; Jia-rong Lian; Ze-feng Xie; Xiang Zhou
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We report improved efficiency in Alq based top-emitting OLEDs with p-Si anode by using an effective electron injection layer and a hole blocking layer to realize better charge balance and recombination. With structure of p-Si/SiO2/MoO3 (2 nm)/NPB (40 nm)/Alq (40 nm)/TPBI (10 nm)/Cs2CO3 (2 nm)/Ag (20 nm)/Alq (40 nm), where the 40 nm Alq capping layer on top Ag cathode was used to improve out-coupling efficiency, the devices show a turn on voltage of 5.5 V and a driving voltage of 10 V for 100 cd/m2 with a maximum efficiency of exceeding 1.2 cd/A and a maximum power efficiency of 0.4 lm/W, which are comparable with the conventional OLEDs and encouraging and promising for Si based OLEDs and optoelectronics.

Paper Details

Date Published: 20 November 2007
PDF: 8 pages
Proc. SPIE 6828, Light-Emitting Diode Materials and Devices II, 68280P (20 November 2007); doi: 10.1117/12.755833
Show Author Affiliations
Yong-bo Yuan, Sun Yat-Sen Univ. (China)
Shu-ming Chen, Sun Yat-Sen Univ. (China)
Jia-rong Lian, Sun Yat-Sen Univ. (China)
Ze-feng Xie, Sun Yat-Sen Univ. (China)
Xiang Zhou, Sun Yat-Sen Univ. (China)

Published in SPIE Proceedings Vol. 6828:
Light-Emitting Diode Materials and Devices II
Jian Wang; Changhee Lee; Hezhou Wang, Editor(s)

© SPIE. Terms of Use
Back to Top