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Proceedings Paper

Research and fabrication of harmonic oscillator with high quality in Si-based MOEMS acceleration seismic geophone
Author(s): Zhengrong Tong; Zhiyong Wang; De En; Caihe Chen; Xuejiao Li; Xiaofang Xie
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Paper Abstract

A kind of photo-electronic integrated acceleration seismic detecting technology, which is novel and precise based on waveguide M-Z interference, is presented. It provieds modern geologic prospect with a novel detection technology. The principle of the photo-electronic integrated acceleration seismic geophone is introduced in this paper. The core of the photo-electronic integrated acceleration is the silicon harmonic oscillator, which is supported by four silicon beams and integrated on the signal beam of the M-Z interferometer. When the seismic mass is subjected to a normal acceleration az, the acceleration az, will result in an inertial force Fz, causing the mass to move up or down like the piston, until the counter force of the beam suspension equals this inertial force. The principle of the harmonic oscillator is briefly introduced, the factors influencing the anisotropic etching quality of the harmonic oscillator are analyzed in detail. In experiment, the fabrication technology was studied and improved. The high quality harmonic oscillator has been successfully fabricated. It has been applied in the integrated optical chip of "the theory and experiment research of photoelectric integrated acceleration seismic geophone technology".

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6836, MEMS/MOEMS Technologies and Applications III, 68360M (4 January 2008); doi: 10.1117/12.755811
Show Author Affiliations
Zhengrong Tong, Tianjin Univ. (China)
Tianjin Univ. of Technology (China)
Zhiyong Wang, Tianjin Univ. of Technology (China)
De En, Tianjin Univ. (China)
Caihe Chen, Tianjin Univ. (China)
Xuejiao Li, Tianjin Univ. of Technology (China)
Xiaofang Xie, Tianjin Univ. of Technology (China)


Published in SPIE Proceedings Vol. 6836:
MEMS/MOEMS Technologies and Applications III
Jung-Chih Chiao; Xuyuan Chen; Zhaoying Zhou; Xinxin Li, Editor(s)

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