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Proceedings Paper

Broad area semiconductor lasers with Gaussian-like current distribution
Author(s): Zhongliang Qiao; Yanping Yao; Huang Bo; Baoxue Bo
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Paper Abstract

According to the principle of carrier diffusion within injection stripe, we fabricated a new type of high power single quantum well broad area semiconductor laser. The designed device has a special current injection stripe which results in a Gaussian-like photon gain laterally. The output power is up to 3.75 watt when the beam quality factor M2 is 10.6 in continuous-wave operation, and the beam quality factor M2 is 5.4 when the output power is 2.5 watt at the same operation condition. The beam quality of broad area semiconductor single quantum well laser has been improved obviously by the designed device

Paper Details

Date Published: 7 January 2008
PDF: 7 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 682415 (7 January 2008); doi: 10.1117/12.755805
Show Author Affiliations
Zhongliang Qiao, Changchun Univ. of Science and Technology (China)
Yanping Yao, Changchun Univ. of Science and Technology (China)
Huang Bo, Changchun Univ. of Science and Technology (China)
Baoxue Bo, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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