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Proceedings Paper

Performance analysis of 256 element linear 2.4µm InGaAs photovoltaic detector arrays
Author(s): Kefeng Zhang; Hengjing Tang; Xiaoli Wu; Xue Li; Yonggang Zhang; Haimei Gong
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Paper Abstract

In this work, the performance of InxGa1-xAs photovoltaic detectors with cutoff wavelength of 2.4μm(x=0.78) were investigated. The detector arrays were fabricated using gas source molecular beam epitaxy (GSMBE) grown material and arranged in linear arrays of 256 pixels of 56×56μm2 dimension. The transition of the large lattice mismatch (1.6%) between the substrate and the absorption layer was dealt with a linearity transformation InxGa1-xAs buffer layer. The dark-current performance achieved is as low as 10-10A at 300K and a bias voltage of -0.5V. This corresponds to a figure of merit for detector resistance R0 times detector pixel area A of R0A =3.5~7.5Ωcm2 at 300K and quantum efficiency above 60%. Room temperature D*(λp) values beyond 3×1010cmHz1/2W-1.

Paper Details

Date Published: 8 January 2008
PDF: 8 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683506 (8 January 2008); doi: 10.1117/12.755774
Show Author Affiliations
Kefeng Zhang, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Xiaoli Wu, Shanghai Institute of Technical Physics (China)
Graduate School of the Chinese Academy of Sciences (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Yonggang Zhang, Shanghai Institute of Microsystem and Information Technology (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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