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Proceedings Paper

Compact circuit modeling of semiconductor lasers for analog optical link simulations
Author(s): Shangjian Zhang; Ninghua Zhu; Yong Liu
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Paper Abstract

Accurate and rapid analyses and simulation of semiconductor laser performance, such as small-signal modulation bandwidth, dynamic impedance and large-signal nonlinear distortion etc., are required for the optimal design of an optical communication system. In this paper, by introducing a novel normalized transformation for rate equations of semiconductor lasers, a compact rate-equation-based circuit model is presented and implemented in Agilent's advanced design system. Furthermore, the model is enhanced by including the current-voltage characteristics, and can be directly cascaded with extrinsic parasitic circuits for circuit- or system-level simulation. Thus, the model is applicable for optical transmission system performance evaluation and network characterization in both time and frequency domains. The steady-state and small-signal characteristics, such as current-photon density curve, current-voltage curve and input impedance, are predicted by this model. Two important dynamic characteristics of second-order harmonic distortion and two-tone third-order intermodulation products are simulated under different driving conditions. Fundamental sinusoidal signals at 1 GHz and 2GHz with peak-to-peak modulation current of 11.2mA and 18mA are used to investigate second-order harmonic distortion of semiconductor lasers. For the two-tone third-order intermodulation, two equal-amplitude sinusoidal signals at 4 GHz and 4.04 GHz, each with peak-to-peak modulation current of 11.2 mA, are used to examine the products at 3.96 and 4.08 GHz. The simulated results are compared to the published measurements results. Experiments show that the measured results agree well with the published data.

Paper Details

Date Published: 7 January 2008
PDF: 7 pages
Proc. SPIE 6824, Semiconductor Lasers and Applications III, 682414 (7 January 2008); doi: 10.1117/12.755713
Show Author Affiliations
Shangjian Zhang, Univ. of Electronic Science and Technology of China (China)
Institute of Semiconductors (China)
Ninghua Zhu, Institute of Semiconductors (China)
Yong Liu, Univ. of Electronic Science and Technology of China (China)


Published in SPIE Proceedings Vol. 6824:
Semiconductor Lasers and Applications III
Lianghui Chen; Hiroyuki Suzuki; Paul T. Rudy; Ninghua Zhu, Editor(s)

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