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Proceedings Paper

Research of different structure integrated photodetectors in standard CMOS technology
Author(s): Xiang Cheng; Jiantao Bian; Chao Chen; Wei Chen
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Paper Abstract

Three kinds of structure photodetectors, N+/N-Well/P-Substrate, P+/N-Well/P-Substrate and finger N+/N-Well/P-Substrate, have been fabricated in CSMC 0.5μm CMOS process. The characteristics of different photodetectors are comparatively tested. The N+/N-Well/P-Substrate photodetector is choosed for construction of novel Spice model and fabrication of OEIC chip, considered about both high responsivity and good response speed. A novel Spice model of photodetector is introduced for compatible-design of OEIC. At 780nm and 2.5V reverse bias, the simulated responsivity based on the Spice model is 0.251A/W, close to the measured value 0.253A/W. Finally, a full CMOS monolithic OEIC is successfully accomplished with a gain of 38.1mV/μW in 780nm for optical-disc signal pickup.

Paper Details

Date Published: 8 January 2008
PDF: 7 pages
Proc. SPIE 6838, Optoelectronic Devices and Integration II, 68381O (8 January 2008); doi: 10.1117/12.755698
Show Author Affiliations
Xiang Cheng, Xiamen Univ. (China)
Jiantao Bian, Xiamen Univ. (China)
Jiangsu Polytechnic Univ. (China)
Chao Chen, Xiamen Univ. (China)
Wei Chen, Xiamen Univ. (China)

Published in SPIE Proceedings Vol. 6838:
Optoelectronic Devices and Integration II
Xuping Zhang; Hai Ming; Maggie Yihong Chen, Editor(s)

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