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Proceedings Paper

Characterization of AlGaN on GaN template grown by MOCVD
Author(s): Jianchang Yan; Junxi Wang; Naixin Liu; Zhe Liu; Jinmin Li
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Paper Abstract

AlxGa1-xN layer was grown on sapphire substrate with GaN template by Metal Organic Chemical Vapor Deposition system (MOCVD). High temperature AlN (HT-AlN) interlayer was inserted between AlxGa1-xN layer and GaN template to solve the cracking problem that often appears on AlxGa1-xN surface when directly grown on high temperature GaN template. Optical microscope, scanning electron microscopy (SEM), atomic force microscope (AFM), high resolution x-ray diffraction (HRXRD) and cathodoluminescence (CL) were used for characterization. It was found that the cracking was successfully eliminated. Furthermore, the crystalline quality of AlxGa1-xN layer with HT-AlN interlayer was much improved. Interference fringes were found in the HRXRD images. CL test showed that yellow emission was much reduced for AlGaN layer with HT-AlN interlayer.

Paper Details

Date Published: 4 January 2008
PDF: 6 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 68410K (4 January 2008); doi: 10.1117/12.755635
Show Author Affiliations
Jianchang Yan, Institute of Semiconductors (China)
Junxi Wang, Institute of Semiconductors (China)
Naixin Liu, Institute of Semiconductors (China)
Zhe Liu, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Ling Wu; Yubo Fan; Yong-Hang Zhang; Michael E. Coltrin; Yuwen Zhao; Nuofu Chen; Vladimir M. Andreev; Jai Singh, Editor(s)

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