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Proceedings Paper

256x1 element linear InGaAs short wavelength near-infrared detector arrays
Author(s): Xue Li; Hengjing Tang; Guangyu Fan; Dafu Liu; Xiumei Shao; Yonggang Zhang; Haiyan Zhang; Xinyu Chen; Sangen Zhu; Haimei Gong; Jiaxiong Fang
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Paper Abstract

256×1 element linear InGaAs detector arrays assembly have been fabricated for the short wave infrared band(0.9~1.7μm), including the detector, CMOS readout circuits, thermoelectric cooler in a sealed package. The InGaAs detectors were achieved by mesa structure on the p-InP/i-InGaAs/n-InP double hetero-structure epitaxial material. 256×1 element linear InGaAs detectors were wire-bonded to 128×1 element odd and even ROIC, which were packaged in a dual-in-line package by parallel sealing. The characteristics of detectors and detector arrays module were investigated at the room temperature. The detector shows response peak at 1.62μm with 50% cutoff wavelength of 1.73μm and average R0A with 5.02KΩ•cm2. Response non-uniformity and average peak detectivity of 256×1 element linear InGaAs detector arrays are 3.10% and 1.38×1012cmHz1/2/W, respectively.

Paper Details

Date Published: 8 January 2008
PDF: 8 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683505 (8 January 2008); doi: 10.1117/12.755599
Show Author Affiliations
Xue Li, Shanghai Institute of Technical Physics (China)
Hengjing Tang, Shanghai Institute of Technical Physics (China)
Guangyu Fan, Shanghai Institute of Technical Physics (China)
Dafu Liu, Shanghai Institute of Technical Physics (China)
Xiumei Shao, Shanghai Institute of Technical Physics (China)
Yonggang Zhang, Shanghai Institute of Microsystem and Information Technology (China)
Haiyan Zhang, Shanghai Institute of Technical Physics (China)
Xinyu Chen, Shanghai Institute of Technical Physics (China)
Sangen Zhu, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)
Jiaxiong Fang, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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