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Proceedings Paper

Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
Author(s): P. J. Carrington; V. A. Solov'ev; Q. Zhuang; S. V. Ivanov; A. Krier
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Paper Abstract

We report the molecular beam epitaxial growth of InSb quantum dots (QD) inserted as sub-monolayers in an InAs matrix and grown using Sb2 and As2 fluxes. These InSb QD nanostructures exhibit intense mid-infrared photoluminescence up to room temperature. The nominal thickness of the sub-monolayer insertions can be controlled by the growth temperature (TGr = 450-320 °C) which gives rise to the variation of the emission wavelength within the 3.6-4.0 μm range at room temperature. Light emitting diodes where fabricated using ten InSb QD sheets and were found to exhibit bright electroluminescence with a single peak at 3.8 μm at room temperature. A comparative analysis of the optical properties of the structures grown using (Sb2,As2) and (Sb4,As4) is also presented.

Paper Details

Date Published: 1 February 2008
PDF: 9 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 69000I (1 February 2008); doi: 10.1117/12.755465
Show Author Affiliations
P. J. Carrington, Lancaster Univ. (United Kingdom)
V. A. Solov'ev, Lancaster Univ. (United Kingdom)
Ioffe Physico-Technical Institute (Russia)
Q. Zhuang, Lancaster Univ. (United Kingdom)
S. V. Ivanov, Ioffe Physico-Technical Institute (Russia)
A. Krier, Lancaster Univ. (United Kingdom)

Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)

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