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Proceedings Paper

High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting
Author(s): Fawang Yan; Haiyong Gao; Yang Zhang; Jinmin Li; Yiping Zeng; Guohong Wang; Fuhua Yang
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Paper Abstract

Nano-patterning sapphire substrates technique has been developed for nitrides light-emitting diodes (LEDs) growths. It is expected that the strain induced by the lattice misfits between the GaN epilayers and the sapphire substrates can be effectively accommodated via the nano-trenches. The GaN epilayers grown on the nano-patterned sapphire substrates by a low-pressure metal organic chemical vapor deposition (MOCVD) are characterized by means of scanning electron microscopy (SEM), high-resolution x-ray diffraction (HRXRD) and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about 46% increment in device performance is measured for the InGaN/GaN blue LEDs grown on the nano-patterned sapphire substrates.

Paper Details

Date Published: 4 December 2007
PDF: 7 pages
Proc. SPIE 6841, Solid State Lighting and Solar Energy Technologies, 684103 (4 December 2007); doi: 10.1117/12.755420
Show Author Affiliations
Fawang Yan, Institute of Semiconductors (China)
Haiyong Gao, Institute of Semiconductors (China)
Yang Zhang, Institute of Semiconductors (China)
Jinmin Li, Institute of Semiconductors (China)
Yiping Zeng, Institute of Semiconductors (China)
Guohong Wang, Institute of Semiconductors (China)
Fuhua Yang, Institute of Semiconductors (China)

Published in SPIE Proceedings Vol. 6841:
Solid State Lighting and Solar Energy Technologies
Jinmin Li; Yuwen Zhao; Nuofu Chen; Ling Wu; Yubo Fan; Vladimir M. Andreev; Yong-Hang Zhang; Jai Singh; Michael E. Coltrin, Editor(s)

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