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Proceedings Paper

The distribution of grating-coupled field of quantum well infrared photodetector using FDTD method
Author(s): Hongbo Chen; Xiaoshuang Chen; Yong Zeng; Zhifeng Li; Dayuan Xiong; Wei Lu
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Paper Abstract

For most commonly used GaAs/AlGaAs n-type quantum well infrared photodetectors (QWIPs), the normal incident absorption is not possible because of the transition rule. The optical grating is required to achieve high absorption quantum efficiencies. When some gratings are patterned on the metal plate, the polarization direction can be changed greatly because of the diffraction effect. Finite difference time domain (FDTD) method has been used to investigate the effect of a reflection metal grating on the couple efficiency previously. However, the authors only take one metal grating and apply periodic boundary condition along the grating direction due to the computation limit. For a real QWIP system, such simulation is crude. In this work we consider a real GaAs/AlGaAs QWIP with a wavelength response around 15um and use FDTD method to investigate the effect of a reflection metal grating on the electric field pattern and the couple efficiency. The simulating results show that the electric field pattern is not periodic for every metal grating in a real QWIP system. We have also studied the influence of the substrate thickness and the grating period on the electric field pattern and the couple efficiency. These results offer a guideline for the design of QWIP.

Paper Details

Date Published: 17 January 2008
PDF: 6 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68351E (17 January 2008); doi: 10.1117/12.755093
Show Author Affiliations
Hongbo Chen, Shanghai Institute of Technical Physics (China)
Xiaoshuang Chen, Shanghai Institute of Technical Physics (China)
Yong Zeng, Shanghai Institute of Technical Physics (China)
Royal Institute of Technology (Sweden)
Zhifeng Li, Shanghai Institute of Technical Physics (China)
Dayuan Xiong, Shanghai Institute of Technical Physics (China)
Wei Lu, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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