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Proceedings Paper

Study on microstructure of amorphous GaAs and hydrogen doped amorphous GaAs thin films
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Paper Abstract

GaAs films have been deposited on substrates of quartz glass by radio frequency magnetron sputtering technique in the atmosphere with or without hydrogen. The GaAs and hydrogen doped GaAs thin films have been studied by X-ray diffraction, scanning electron microscopy. Moreover radial distribution function and pair correlation function analysis method have been established in order to analyze microstructure further. The as-deposited films are amorphous at room temperature. The distances between the first neighboring atoms of a-GaAs:H don't change compared with a-GaAs:H. But Hydrogen restrains reuniting of crystal grain while sputtering and short range regular domains of a-GaAs:H are smaller than that of a-GaAs. In addition, the morphology of GaAs films is coarser than that of GaAs:H thin film. The content of hydrogen and the various types of hydrogen bonding have been investigated using Fourier transform infrared absorption spectroscope.

Paper Details

Date Published: 24 January 2008
PDF: 8 pages
Proc. SPIE 6829, Advanced Materials and Devices for Sensing and Imaging III, 68291C (24 January 2008); doi: 10.1117/12.754989
Show Author Affiliations
Yanping Yao, Changchun Univ. of Science and Technology (China)
Jilin Normal Univ. (China)
Chunling Liu, Changchun Univ. of Science and Technology (China)
Jilin Normal Univ. (China)
Baoxue Bo, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 6829:
Advanced Materials and Devices for Sensing and Imaging III
Anbo Wang; Yimo Zhang; Yukihiro Ishii, Editor(s)

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