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Proceedings Paper

The electronic structure of the PbS(-100) with vacancy defect: first-principles study
Author(s): Zong-ling Ding; Huai-zhong Xing; Yan Huang; Xiao-shuang Chen
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Paper Abstract

Electronic properties of both Pb and S vacancy defect in PbS(-100) have been studied using the first principles density functional theory (DFT) calculations with the plane-wave pseudopotentials. The densities of states are computed to investigate the effect of the Pb and S vacancy on the electronic structure, respectively. In the case of S vacancy defect, the Fermi energy shifted to the conduction band making it an n-type PbS (donor). While in the case of Pb vacancy the DOS do change appreciably.

Paper Details

Date Published: 8 January 2008
PDF: 4 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 68350L (8 January 2008); doi: 10.1117/12.754973
Show Author Affiliations
Zong-ling Ding, Donghua Univ. (China)
Huai-zhong Xing, Donghua Univ. (China)
Yan Huang, Shanghai Institute of Technical Physics (China)
Xiao-shuang Chen, Shanghai Institute of Technical Physics (China)

Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

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