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Proceedings Paper

Interband GaSb-based laser diodes for spectral regions of 2.3-2.4 µm and 3-3.1 µm with improved room-temperature performance
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Paper Abstract

The paper describes the heterostructures and device output parameters of Type-I quantum-well (QW) laser diodes with InGaAsSb active regions designed for room-temperature operation near 2.3 μm and 3.1 μm. For both designs decrease of the threshold current density and increase of the room-temperature output power have been achieved with increase of the QW depth for holes. For the 2.3 μm laser diodes, confinement of holes in the QW embedded into the AlGaAsSb waveguide was improved with increase of the hole energy level with compressive strain. Arrays of 1-mm-long 100-μmwide laser diode emitters with a fill-factor of 30 % have been fabricated. A quasi-CW (30 μs, 300 Hz) output power of 16.7 W from a 4-mm-wide array has been obtained with conductive cooling. For the laser diodes designed for roomtemperature operation above 3 μm, the hole confinement was improved by lowering the valence band energy in the waveguide. Two approached were implemented: one with increase of the Al composition, and another with utilization of quinternary InAlGaAsSb waveguide with increased As composition compared to the conventional AlGaAsSb waveguide. With the quinternary waveguide approach, a room-temperature CW output power in excess of 130 mW and a threshold current as low as 0.6 A have been obtained at λ = 3 μm from 2-mm-long 100-μm-wide emitters.

Paper Details

Date Published: 12 February 2008
PDF: 10 pages
Proc. SPIE 6900, Quantum Sensing and Nanophotonic Devices V, 690004 (12 February 2008); doi: 10.1117/12.754713
Show Author Affiliations
Gregory Belenky, Stony Brook Univ. (United States)
Dimitri Donetski, Stony Brook Univ. (United States)
Leon Shterengas, Stony Brook Univ. (United States)
Takashi Hosoda, Stony Brook Univ. (United States)
Jianfeng Chen, Stony Brook Univ. (United States)
Gela Kipshidze, Stony Brook Univ. (United States)
Michail Kisin, Stony Brook Univ. (United States)
David Westerfeld, Power Photonic Corp. (United States)

Published in SPIE Proceedings Vol. 6900:
Quantum Sensing and Nanophotonic Devices V
Rengarajan Sudharsanan; Christopher Jelen, Editor(s)

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