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Proceedings Paper

Inverse lithography technology (ILT): keep the balance between SRAF and MRC at 45 and 32 nm
Author(s): Linyong Pang; Yong Liu; Thuc Dam; Kresimir Mihic; Thomas Cecil; Dan Abrams
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Paper Abstract

In this paper, we present the Luminescent's ILT approach that can rapidly solve for the optimal photomask design. We will discuss the latest development of ILT at Luminescent in the areas of sub-resolution assist feature (SRAF) generation and optimization to improve process window, and mask rule compliance (MRC). Results collected internally and from customers demonstrate that ILT is not only an R&D tool, but also a tool quickly maturing for production qualification at advanced technology nodes. By enforcing the proper constraints while optimizing the masks, ILT can improve process windows while maintaining mask costs at a reasonable level.

Paper Details

Date Published: 30 October 2007
PDF: 10 pages
Proc. SPIE 6730, Photomask Technology 2007, 673052 (30 October 2007); doi: 10.1117/12.754568
Show Author Affiliations
Linyong Pang, Luminescent Technologies, Inc. (United States)
Yong Liu, Luminescent Technologies, Inc. (United States)
Thuc Dam, Luminescent Technologies, Inc. (United States)
Kresimir Mihic, Luminescent Technologies, Inc. (United States)
Thomas Cecil, Luminescent Technologies, Inc. (United States)
Dan Abrams, Luminescent Technologies, Inc. (United States)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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