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Proceedings Paper

InAs/InP based quantum dot mode-locked semiconductor lasers at 1.5 um
Author(s): Guang-Hua Duan; F. Lelarge; B. Dagens; R. Brenot; A. Accard; A. Shen; F. van Dijk; D. Make; O. Le Gouezigou; L. Le Gouezigou; J.-G. Provost; F. Poingt; J. Landreau; O. Drisse; E. Derouin; B. Rousseau; F. Pommereau
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Paper Abstract

This paper summarizes recent advances on InAs/InP mode-locked quantum dashes (QD) lasers, and their applications for all-optical clock recovery, short pulse generation and millimeter wave generation. We demonstrate that QD FP lasers, owing to the small confinement factor and the 3D quantification of electronic energy levels, exhibit a beating linewidth as narrow as 15 kHz. Such an extremely narrow linewidth, compared to their QW or bulk counterparts, leads to the excellent phase noise and time jitter characteristics when QD lasers are actively mode-locked. We report also on an actively mode-locking tunnel injection quantum dash Fabry-Perot laser diode at 42.7GHz, generating nearly Fourier transform limited pulses with a pulse width of 2ps over 16nm.

Paper Details

Date Published: 26 November 2007
PDF: 6 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67821V (26 November 2007); doi: 10.1117/12.754399
Show Author Affiliations
Guang-Hua Duan, Alcatel-Thales III-V Lab (France)
F. Lelarge, Alcatel-Thales III-V Lab (France)
B. Dagens, Alcatel-Thales III-V Lab (France)
R. Brenot, Alcatel-Thales III-V Lab (France)
A. Accard, Alcatel-Thales III-V Lab (France)
A. Shen, Alcatel-Thales III-V Lab (France)
F. van Dijk, Alcatel-Thales III-V Lab (France)
D. Make, Alcatel-Thales III-V Lab (France)
O. Le Gouezigou, Alcatel-Thales III-V Lab (France)
L. Le Gouezigou, Alcatel-Thales III-V Lab (France)
J.-G. Provost, Alcatel-Thales III-V Lab (France)
F. Poingt, Alcatel-Thales III-V Lab (France)
J. Landreau, Alcatel-Thales III-V Lab (France)
O. Drisse, Alcatel-Thales III-V Lab (France)
E. Derouin, Alcatel-Thales III-V Lab (France)
B. Rousseau, Alcatel-Thales III-V Lab (France)
F. Pommereau, Alcatel-Thales III-V Lab (France)


Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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