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Proceedings Paper

InGaAs/GaAs helical nanobelts as building blocks for nanoscale optoelectronic devices
Author(s): Gilgueng Hwang; Cedric Dockendorf; Dominik J. Bell; Lixin Dong; Hideki Hashimoto; Dimos Poulikakos; Bradley J. Nelson
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Paper Abstract

In this paper, we present the length reduction of optoelectronic sensors using conductometric InGaAs/GaAs helical nanobelts. The helical nanobelt contributes to improve the unit length responsivity of photodetector while maintaining high external quantum efficiency (EQE) per unit length. A nanorobotic assembly and characterization of 3-D helical nanobelts to create in-/out-of-plane optoelectronic sensors has been shown. High optoelectronic sensitivity was revealed from experimental investigation under an optical microscope and from light emitting diodes (LEDs) inside a scanning electron microscope (SEM). A probe type photodetector was assembled using nanorobotic manipulation and in-situ gold nanoparticle ink soldering.

Paper Details

Date Published: 10 October 2007
PDF: 8 pages
Proc. SPIE 6717, Optomechatronic Micro/Nano Devices and Components III, 67170H (10 October 2007); doi: 10.1117/12.754397
Show Author Affiliations
Gilgueng Hwang, ETH Zurich (Switzerland)
The Univ. of Tokyo (Japan)
Cedric Dockendorf, ETH Zurich (Switzerland)
Dominik J. Bell, ETH Zurich (Switzerland)
Lixin Dong, ETH Zurich (Switzerland)
Hideki Hashimoto, The Univ. of Tokyo (Japan)
Dimos Poulikakos, ETH Zurich (Switzerland)
Bradley J. Nelson, ETH Zurich (Switzerland)

Published in SPIE Proceedings Vol. 6717:
Optomechatronic Micro/Nano Devices and Components III

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