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Proceedings Paper

InP-based long wavelength VCSELs: their characteristics and applications
Author(s): N. Nishiyama; C. Caneau; M. Sauer; A. Kobyakov; C. E. Zah
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Paper Abstract

InP-based vertical cavity surface emitting lasers (VCSELs) with AlGaInAs QWs and AlGaInAs/InP DBR have been demonstrated. Over 3 mW and ~1 mW powers at both 1.3 μm and 1.55 μm have been achieved at 20 °C and 85 °C, respectively. Tests for various applications have been performed with our 1.3 and 1.55 μm VCSELs. Error free transmission over 10 km under 10 Gbit/s, 85°C has been demonstrated with both 1.3 and 1.55 μm VCSELs. The effect of electrical dispersion compensation (EDC) with 1.55 μm VCSELs has been confirmed for transmission of medium range data transmission. Radio signal transmission with low error vector magnitude by 1.3 μm VCSELs has been achieved at 2.4 and 5 GHz-band radio frequency.

Paper Details

Date Published: 19 November 2007
PDF: 8 pages
Proc. SPIE 6782, Optoelectronic Materials and Devices II, 67820M (19 November 2007); doi: 10.1117/12.754338
Show Author Affiliations
N. Nishiyama, Tokyo Institute of Technology (Japan)
C. Caneau, Corning Inc. (United States)
M. Sauer, Corning Inc. (United States)
A. Kobyakov, Corning Inc. (United States)
C. E. Zah, Corning Inc. (United States)

Published in SPIE Proceedings Vol. 6782:
Optoelectronic Materials and Devices II
Yoshiaki Nakano, Editor(s)

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