Share Email Print
cover

Proceedings Paper

Growth and characterization of <110> oriented ZnTe single crystal
Author(s): Reng Wang; Weizheng Fang; Pei Zhao; Caihong Zhang; Lei Zhang; Jin Ge; Huier Zhang; Jun Shao; Shuhong Hu; Xuemin Shen; Ning Dai
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

ZnTe crystal has been grown at a temperature as low as 1060°C using Te solvent method. X-ray diffraction showed that the ZnTe crystals were grown from <110> oriented. The transmission was over 60% from 2 μm to 22 μm by using Fourier Transform Infrared Spectrometer. The etch pit density in the sliced wafer was about 2×104 cm-2 detected by Scan Electronic Microscopic. The transmission spectrums were measured from 0.2 to 3 THz by using Terahertz Time Domain Spectroscopy. And the refractive index and extinction coefficient were obtained through analysis of the time domain waveform.

Paper Details

Date Published: 17 January 2008
PDF: 8 pages
Proc. SPIE 6835, Infrared Materials, Devices, and Applications, 683519 (17 January 2008); doi: 10.1117/12.754091
Show Author Affiliations
Reng Wang, Shanghai Institute of Technical Physics (China)
Weizheng Fang, Shanghai Institute of Technical Physics (China)
Pei Zhao, Shanghai Institute of Technical Physics (China)
Caihong Zhang, Nanjing Univ. (China)
Lei Zhang, Shanghai Institute of Technical Physics (China)
Jin Ge, Shanghai Institute of Technical Physics (China)
Huier Zhang, Shanghai Institute of Technical Physics (China)
Jun Shao, Shanghai Institute of Technical Physics (China)
Shuhong Hu, Shanghai Institute of Technical Physics (China)
Xuemin Shen, Shanghai Institute of Technical Physics (China)
Ning Dai, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 6835:
Infrared Materials, Devices, and Applications
Yi Cai; Haimei Gong; Jean-Pierre Chatard, Editor(s)

© SPIE. Terms of Use
Back to Top