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Proceedings Paper

High-performance 4H-SiC single photon avalanche diode operating at solar blind wavelength
Author(s): Xiaobin Xin; Jun Hu; Petre Alexandove; Jian H. Zhao; Brenda L. VanMil; D. Kurt Gaskill; Kok-Keong Lew; Rachael Myers-Ward; Charles Eddy Jr.
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Paper Abstract

A 4H-SiC SPAD with an off-mesa bonding pad operating at 280nm is presented in this paper, with a low dark count rate of 14kHz and 27kHz at single photon detection efficiency of 3.3% and 4.5%, respectively. The device has a low breakdown voltage of 117V and a low dark current of 17fA, 49fA and 147fA at 50%, 90%, and 95% of breakdown voltage, respectively. The quantum efficiency is measured to be 28% (32%) at 280nm (270nm) with a UV to visible rejection ratio >1400 (>1600).

Paper Details

Date Published: 15 October 2007
PDF: 8 pages
Proc. SPIE 6771, Advanced Photon Counting Techniques II, 677114 (15 October 2007); doi: 10.1117/12.752683
Show Author Affiliations
Xiaobin Xin, United Silicon Carbide, Inc. (United States)
Rutgers Univ. (United States)
Jun Hu, Rutgers Univ. (United States)
Petre Alexandove, United Silicon Carbide, Inc. (United States)
Rutgers Univ. (United States)
Jian H. Zhao, Rutgers Univ. (United States)
Brenda L. VanMil, Naval Research Lab. (United States)
D. Kurt Gaskill, Naval Research Lab. (United States)
Kok-Keong Lew, Naval Research Lab. (United States)
Rachael Myers-Ward, Naval Research Lab. (United States)
Charles Eddy Jr., Naval Research Lab. (United States)

Published in SPIE Proceedings Vol. 6771:
Advanced Photon Counting Techniques II
Wolfgang Becker, Editor(s)

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