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Proceedings Paper

3D mask modeling with oblique incidence and mask corner rounding effects for the 32nm node
Author(s): Mazen Saied; Franck Foussadier; Jérôme Belledent; Yorick Trouiller; Isabelle Schanen; Emek Yesilada; Christian Gardin; Jean Christophe Urbani; Frank Sundermann; Frédéric Robert; Christophe Couderc; Florent Vautrin; Laurent LeCam; Gurwan Kerrien; Jonathan Planchot; Catherine Martinelli; Bill Wilkinson; Yves Rody; Amandine Borjon; Nicolo Morgana; Jean-Luc Di-Maria; Vincent Farys
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Paper Abstract

The perpetual shrinking in critical dimensions in semiconductor devices is driving the need for increased resolution in optical lithography. Increasing NA to gain resolution also increases Optical Proximity Correction (OPC) model complexity. Some optical effects which have been completely neglected in OPC modeling become important. Over the past few years, off-axis illumination has been widely used to improve the imaging process. OPC models which utilize such illumination still use the thin film mask approximation (Kirchhoff approach), during optical model generation, which utilizes a normal incidence. However, simulating a three dimensional mask near-field using an off-axis illumination requires OPC models to introduce oblique incidence. In addition, the use of higher NA systems introduces high obliquity field components that can no longer be assimilated as normal incident waves. The introduction of oblique incidence requires other effects, such as corner rounding of mask features, to be considered, that are seldom taken into account in OPC modeling. In this paper, the effects of oblique incidence and corner rounding of mask features on resist contours of 2D structures (i.e. line-ends and corners) are studied. Rigorous electromagnetic simulations are performed to investigate the scattering properties of various lithographic 32nm node mask structures. Simulations are conducted using a three dimensional phase shift mask topology and an off-axis illumination at high NA. Aerial images are calculated and compared with those obtained from a classical normal incidence illumination. The benefits of using an oblique incidence to improve hot-spot prediction will be discussed.

Paper Details

Date Published: 16 November 2007
PDF: 11 pages
Proc. SPIE 6730, Photomask Technology 2007, 673050 (16 November 2007); doi: 10.1117/12.752613
Show Author Affiliations
Mazen Saied, Freescale Semiconductor (France)
Franck Foussadier, STMicroelectronics (France)
Jérôme Belledent, NXP Semiconductors (France)
Yorick Trouiller, CEA/LETI (France)
Isabelle Schanen, IMEP (France)
Emek Yesilada, Freescale Semiconductor (France)
Christian Gardin, Freescale Semiconductor (France)
Jean Christophe Urbani, STMicroelectronics (France)
Frank Sundermann, STMicroelectronics (France)
Frédéric Robert, STMicroelectronics (France)
Christophe Couderc, NXP Semiconductors (France)
Florent Vautrin, STMicroelectronics (France)
Laurent LeCam, NXP Semiconductors (France)
Gurwan Kerrien, STMicroelectronics (France)
Jonathan Planchot, STMicroelectronics (France)
Catherine Martinelli, STMicroelectronics (France)
Bill Wilkinson, Freescale Semiconductor (France)
Yves Rody, NXP Semiconductors (France)
Amandine Borjon, NXP Semiconductors (France)
Nicolo Morgana, Freescale Semiconductor (France)
Jean-Luc Di-Maria, CEA/LETI (France)
Vincent Farys, STMicroelectronics (France)


Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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