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Proceedings Paper

Model-based mask verification
Author(s): Frank Foussadier; Frank Sundermann; Anthony Vacca; Jim Wiley; George Chen; Tadahiro Takigawa; Katsuya Hayano; Syougo Narukawa; Satoshi Kawashima; Hiroshi Mohri; Naoya Hayashi; Hiroyuki Miyashita; Y. Trouiller; F. Robert; F. Vautrin; G. Kerrien; J. Planchot; C. Martinelli; J.L. Di-Maria; Vincent Farys
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Paper Abstract

One of the most critical points for accurate OPC is to have accurate models that properly simulate the full process from the mask fractured data to the etched remaining structures on the wafer. In advanced technology nodes, the CD error budget becomes so tight that it is becoming critical to improve modeling accuracy. Current technology models used for OPC generation and verification are mostly composed of an optical model, a resist model and sometimes an etch model. The mask contribution is nominally accounted for in the optical and resist portions of these models. Mask processing has become ever more complex throughout the years so properly modeling this portion of the process has the potential to improve the overall modeling accuracy. Also, measuring and tracking individual mask parameters such as CD bias can potentially improve wafer yields by detecting hotspots caused by individual mask characteristics. In this paper, we will show results of a new approach that incorporates mask process modeling. We will also show results of testing a new dynamic mask bias application used during OPC verification.

Paper Details

Date Published: 1 November 2007
PDF: 8 pages
Proc. SPIE 6730, Photomask Technology 2007, 673051 (1 November 2007); doi: 10.1117/12.752609
Show Author Affiliations
Frank Foussadier, STMicroelectronics (France)
Frank Sundermann, STMicroelectronics (France)
Anthony Vacca, Brion Technologies, Inc. (United States)
Jim Wiley, Brion Technologies, Inc. (United States)
George Chen, Brion Technologies, Inc. (United States)
Tadahiro Takigawa, Brion Technologies, Inc. (United States)
Katsuya Hayano, Dai Nippon Printing Co., Ltd. (Japan)
Syougo Narukawa, Dai Nippon Printing Co., Ltd. (Japan)
Satoshi Kawashima, Dai Nippon Printing Co., Ltd. (Japan)
Hiroshi Mohri, Dai Nippon Printing Co., Ltd. (Japan)
Naoya Hayashi, Dai Nippon Printing Co., Ltd. (Japan)
Hiroyuki Miyashita, Dai Nippon Printing Co., Ltd. (Japan)
Y. Trouiller, CEA/LETI (France)
F. Robert, STMicroelectronics (France)
F. Vautrin, STMicroelectronics (France)
G. Kerrien, STMicroelectronics (France)
J. Planchot, STMicroelectronics (France)
C. Martinelli, STMicroelectronics (France)
J.L. Di-Maria, CEA/LETI (France)
Vincent Farys, STMicroelectronics (France)

Published in SPIE Proceedings Vol. 6730:
Photomask Technology 2007
Robert J. Naber; Hiroichi Kawahira, Editor(s)

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