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Proceedings Paper

InP nanowire photodetectors heteroepitaxially grown between silicon electrodes
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Paper Abstract

We demonstrate an InP nanowire based photodetector laterally integrated between two (111)-oriented vertical silicon surfaces. The nanowires are grown through a simple single step chemical vapor deposition (CVD) process using gold nanoparticles as catalyst with in-situ p-doping and have been heteroepitaxially bridged between a pair of prefabricated p-doped Si electrodes. Nonlinear current-voltage characteristics are observed. Although this nonlinearity resembles a back-to-back rectifying profile it originates from space-charge limited conductivity of the nanowires. DC photoelectric characteristics of the device were measured under optical illumination (λ=630 nm) above the bandgap energy (1.34 eV or ~925 nm at room temperature) of InP. The variation in photoconductance with varying input optical power demonstrates high sensitivity of the device to optical illumination.

Paper Details

Date Published: 10 September 2007
PDF: 7 pages
Proc. SPIE 6779, Nanophotonics for Communication: Materials, Devices, and Systems IV, 67790K (10 September 2007); doi: 10.1117/12.752513
Show Author Affiliations
Ataur Sarkar, Univ. of California, Davis (United States)
Anurag Chaudhry, Univ. of California, Davis (United States)
V. J. Logeeswaran, Univ. of California, Davis (United States)
Sungsoo Yi, Philips Lumileds Lighting Co. (United States)
M. Saif Islam, Univ. of California, Davis (United States)

Published in SPIE Proceedings Vol. 6779:
Nanophotonics for Communication: Materials, Devices, and Systems IV
Nibir K. Dhar; Achyut Kumar Dutta; M. Saif Islam, Editor(s)

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